- Товари
- Транзисторы полевые (FETs, MOSFETs)
- BSS84, Транзистор, P-канал, 50В 130мА [SOT-23]
BSS84, Транзистор, P-канал, 50В 130мА [SOT-23]
Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
Структура | p-канал |
Максимальное напряжение сток-исток Uси,В | -50 |
Максимальный ток сток-исток при 25 С Iси макс..А | -0.13 |
Максимальное напряжение затвор-исток Uзи макс.,В | ±20 |
Максимальная рассеиваемая мощность Pси макс..Вт | 0.36 |
Крутизна характеристики, S | 270 |
Корпус | sot23 |
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