FDS6675
Артикул: FDS6675
Виробник:
ON Semiconductor
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.<BR/>The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.<BR/>Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.<BR/>The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.<BR/>Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 8-SOIC N, инфо: Полевой транзистор, P-канальный, 30 В, 11 А
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