- Товари
- Транзисторы полевые (FETs, MOSFETs)
- FQP19N20, Транзистор MOSFET N-CH 200V 19.4A [TO-220]
FQP19N20, Транзистор MOSFET N-CH 200V 19.4A [TO-220]
Артикул: FQP19N20
Виробник:
Fairchild Semiconductor
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.<BR/>They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.<BR/>They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Структура | n-канал |
Максимальное напряжение сток-исток Uси,В | 200 |
Максимальный ток сток-исток при 25 С Iси макс..А | 19.44 |
Максимальное напряжение затвор-исток Uзи макс.,В | ±30 |
Максимальная рассеиваемая мощность Pси макс..Вт | 140 |
Крутизна характеристики, S | 14.5 |
Корпус | to220 |
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