- Товари
- Транзисторы полевые (FETs, MOSFETs)
- IPD031N03LGATMA1, МОП-транзистор, N Канал, 90 А, 30 В, 2.6 мОм, 10 В, 1 В [TO-252]
IPD031N03LGATMA1, МОП-транзистор, N Канал, 90 А, 30 В, 2.6 мОм, 10 В, 1 В [TO-252]
Артикул: IPD031N03LGATMA1
Виробник:
Infineon Technologies
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Структура | n-канал |
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0031 ом при 30a, 10в |
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