- Товари
- Транзисторы полевые (FETs, MOSFETs)
- IRF5305PBF, Транзистор, P-канал 55В 31А [TO-220AB]
IRF5305PBF, Транзистор, P-канал 55В 31А [TO-220AB]
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Структура | p-канал |
Максимальное напряжение сток-исток Uси,В | -55 |
Максимальный ток сток-исток при 25 С Iси макс..А | -31 |
Максимальное напряжение затвор-исток Uзи макс.,В | ±20 |
Максимальная рассеиваемая мощность Pси макс..Вт | 110 |
Крутизна характеристики, S | 8 |
Корпус | to220ab |
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