IRF7351TRPBF, Транзистор HEXFET, 2N-канала 60В 8А [SO-8]

IRF7351TRPBF, Транзистор HEXFET, 2N-канала 60В 8А [SO-8]
IRF7351TRPBF, Транзистор HEXFET, 2N-канала 60В 8А [SO-8]
Виробник:
Infineon Technologies
Документація:
Dual N-Channel Power MOSFET, Infineon
Infineon's dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.