- Товари
- Транзисторы полевые (FETs, MOSFETs)
- IRFHS9351TRPBF, 2Pкан -30В -5.1А 170мОм PQFN2x2
IRFHS9351TRPBF, 2Pкан -30В -5.1А 170мОм PQFN2x2
Артикул: IRFHS9351TRPBF
Виробник:
Infineon Technologies
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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