MTD3055VL, МОП-транзистор, N Канал, 12 А, 60 В, 0.18 Ом, 5 В, 1.5 В [DPAK]

MTD3055VL, МОП-транзистор, N Канал, 12 А, 60 В, 0.18 Ом, 5 В, 1.5 В [DPAK]
MTD3055VL, МОП-транзистор, N Канал, 12 А, 60 В, 0.18 Ом, 5 В, 1.5 В [DPAK]
Виробник:
Fairchild Semiconductor
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.