NDC7002N, Транзистор 2N-канала 50В 510мА [SSOT6]

The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.

• High saturation current
• High density cell design for low RDS (ON)
• Design using copper lead-frame for superior thermal and electrical capabilities