SI4686DY-T1-E3, Транзистор MOSFET N-CH 30В 18.2А [SOIC-8]

SI4686DY-T1-E3, Транзистор MOSFET N-CH 30В 18.2А [SOIC-8]
SI4686DY-T1-E3, Транзистор MOSFET N-CH 30В 18.2А [SOIC-8]
Артикул: SI4686DY-T1-E3
Виробник:
Vishay

The SI4686DY-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high-side DC-to-DC conversion applications.

• 100% Rg tested
• Extremely low Qgd WFET® technology for low switching losses
• -55 to 150°C Operating temperature range