STB28NM50N, Mosfet MDmesh II, N-канал, 500 В, 0.135 Ом, 21 А [D2-PAK]

STB28NM50N, Mosfet MDmesh II, N-канал, 500 В, 0.135 Ом, 21 А [D2-PAK]
STB28NM50N, Mosfet MDmesh II, N-канал, 500 В, 0.135 Ом, 21 А [D2-PAK]
Артикул: STB28NM50N
Виробник:
ST Microelectronics
Документація:
Завантажити Datasheet

The STB28NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.

• 100% Avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance