STB34NM60ND, Mosfet FDmesh II, N-канал, 600 В, 0.097 Ом, 29А, [D2-PAK]

The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST's MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.

• The worldwide best RDS (ON) area amongst the fast recovery diode device
• 100% Avalanche tested
• Low gate input resistance
• The world's best RDS (ON) in TO-220 amongst the fast recovery diode devices
• Extremely high dV/dt and avalanche capabilities