- Товари
- Транзисторы полевые (FETs, MOSFETs)
- STB45N65M5, Mosfet MDmesh V, N-канал, 650 В, 0.067 Ом, 35 А, D2PAK
STB45N65M5, Mosfet MDmesh V, N-канал, 650 В, 0.067 Ом, 35 А, D2PAK
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Структура | n-канал |
Максимальное напряжение сток-исток Uси,В | 650 |
Максимальный ток сток-исток при 25 С Iси макс..А | 35 |
Максимальное напряжение затвор-исток Uзи макс.,В | ±25 |
Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
Корпус | d2pak |
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