ST Microelectronics STGW40M120DF3, БТИЗ транзистор, 80 А, 1.85 В, 468 Вт ...

The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery anti-parallel diode
• 10µs Short-circuit withstand time

Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные