- Товари
- Транзисторы полевые (FETs, MOSFETs)
- BSP317P, Транзистор, P-канал, 250В 430мА 4Ом [SOT-223]
BSP317P, Транзистор, P-канал, 250В 430мА 4Ом [SOT-223]
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
Структура | p-канал |
Максимальное напряжение сток-исток Uси,В | -250 |
Максимальный ток сток-исток при 25 С Iси макс..А | -0.43 |
Максимальное напряжение затвор-исток Uзи макс.,В | ±20 |
Максимальная рассеиваемая мощность Pси макс..Вт | 1.8 |
Крутизна характеристики, S | 0.76 |
Корпус | sot223 |
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