- Товари
- Транзисторы полевые (FETs, MOSFETs)
- IRLHS2242TRPBF, P-кан -20В -8.5А PQFN2x2
IRLHS2242TRPBF, P-кан -20В -8.5А PQFN2x2
Артикул: IRLHS2242TRPBF
Виробник:
International Rectifier
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Структура | p-канал |
Максимальное напряжение сток-исток Uси,В | -20 |
Максимальный ток сток-исток при 25 С Iси макс..А | -8.5 |
Максимальное напряжение затвор-исток Uзи макс.,В | 12 |
Максимальная рассеиваемая мощность Pси макс..Вт | 9.6 |
Корпус | pqfn 2x2 mm |
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