NDS355AN
Артикул: NDS355AN
Виробник:
ON Semiconductor
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 3-SSOT, инфо: Полевой транзистор, N-канальный, 30 В, 1.7 А, 0.5 Вт
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