- Товари
- Транзисторы полевые (FETs, MOSFETs)
- STD18N55M5, Транзистор, MDmesh V, N-канал, 550 В, 0.18 Ом, 13 А [D-PAK]
STD18N55M5, Транзистор, MDmesh V, N-канал, 550 В, 0.18 Ом, 13 А [D-PAK]
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Структура | n-канал |
Максимальное напряжение сток-исток Uси,В | 550 |
Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.192 ом при 8a, 10в |
Максимальная рассеиваемая мощность Pси макс..Вт | 90 |
Корпус | dpak |
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