STW20NM60, Транзистор, MDmesh, N-канал, 600В, 0.25Ом, 20А [TO-247]

STW20NM60, Транзистор, MDmesh, N-канал, 600В, 0.25Ом, 20А [TO-247]
STW20NM60, Транзистор, MDmesh, N-канал, 600В, 0.25Ом, 20А [TO-247]
Виробник:
ST Microelectronics
Документація:

The STW20NM60 is a 600V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

• High dv/dt and avalanche capabilities
• 100% Avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance