- Товари
- Транзисторы полевые (FETs, MOSFETs)
- STY112N65M5
STY112N65M5
Артикул: STY112N65M5
Виробник:
ST Microelectronics
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: MAX247[тм], инфо: Полевой транзистор, N-канальный, 710 В, 93 А, 0.022 Ом, 190 Вт
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